Caractéristiques techniques

jusque 1600°C sous atmosphère contrôlée

Exemples d'essais

Caractéristiques techniques

Vertical Measurement : Range0.1nm to 1mm

Vertical Resolution : 1< 1Å Ra

RMS Repeatability : 20.01nm

Vertical Scan Speedup : to 7.2μm/sec (288 μin./sec)

Lateral Spatial Sampling : 0.08 to 13.1μm

Field- of -View : 8.24mm to 0.05mm (larger areas with Data Stitching option)

Reflectivity : 1%  to 100%

Exemples d'essais

Caractéristiques techniques

Voltage control (potentiostat mode)
Applied voltage range = ± 10V
Applied voltage resolution for ± 10mV signal = 300nV
(technique dependent) for ± 100mV signal = 3μV
for ± 1V signal = 30μV
for ± 10V signal = 300μV
Applied voltage accuracy ± 0.2% of value ± 2mV
Maximum scan rate 10kVs-1 (10mV step)
Maximum scan range / resolution ± 10V / 300μV

Current control (galvanostat mode)
Applied current range = ± full scale (depends on range selected) ± 4A (standard)
Applied current resolution = ± 1/32,000 x full scale
Applied current accuracy = ± 0.2% of reading, ±0.2 % of range, ±2pA
Maximum current range / resolution = ± 4A / 123μA
Minimum current range / resolution = ± 40pA / 1.2fA

Voltage Measurement
Voltage range = ± 10V
Voltage resolution = 1.5μV (2.5V range, X50 gain applied)
Voltage accuracy = ± 0.2% of reading, ± 2mV

Exemples d'essais

Caractéristiques techniques

Exemples d'essais

Caractéristiques techniques

Eléments analysables : C, Si, Mn, P, S, Cu, Ni, Cr, Mg,Ce, Mo, Ti, V, Nb, B, Fe, Al, Zn, H, O, Cl, N, Ca, Sr, Zr, Na, Sn, Be, Pb, Co, W, As, Sb, Ba, Te

Surface analysable : 2 et 4 mm

Matériaux analysables : isolants, conducteurs ou hybrides

Profondeur d'analyse : 1nm à 1 mm

Exemples d'essais